Cantilever having step-up structure and method for manufacturing the same

ABSTRACT

A cantilever having a step-up structure and a method of manufacturing the same. The cantilever includes a substrate, an anchor formed on the substrate, and a moving plate connected to the anchor while maintaining a predetermined gap from the substrate. The anchor includes a first anchor of a predetermined shape and a second anchor perpendicular to an edge of the first anchor while being formed along a longitudinal axis of the moving plate. Accordingly, a deformation of the cantilever caused by the high temperature and pressure in a manufacturing process thereof is considerably reduced. As a result, the yield rate of the cantilever is improved, and the reliability of a product using the cantilever is also improved.

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit of Korean Patent Application No. 2002-434 filed on Jan. 4, 2002, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference.

BACKGROUND OF THE INVENTION

[0002] 1. Field of the Invention

[0003] The present invention relates to a micro electro mechanical system (MEMS) driving device, and more particularly, to a cantilever having a step-up structure which reduces a deformation of a moving plate and a method of manufacturing the same.

[0004] 2. Description of the Related Art

[0005] Generally, a MEMS driving device, such as a MEMS switch, is an application device used to route a signal and match impedance networks in a radio communication system which uses microwaves or millimeter waves.

[0006] Typical MEMS techniques used to produce a MEMS are a bulk micro-machining technique and a surface micro-machining technique. The bulk micro-machine technique enables a mechanical driving by forming an air gap through melting a portion of a substrate after forming a multiple-layer on the substrate, such as a silicon substrate. The surface micro-machining technique produces a predetermined structure according to a shape designed by depositing polycrystalline silicon, a silicon oxide layer, an oxide layer, and a metal layer on a substrate. The surface micro-machining technique is used to manufacture various micro machines including an atomic force microscope (AFM) tip, a barometer, and an RF resonator.

[0007] A micro multilayer thin film cantilever having a step-up structure is an example of a MEMS driving device produced by a surface micro-machining technique.

[0008]FIG. 1 shows a perspective view of a conventional cantilever, and FIG. 2 shows a sectional perspective view of the cantilever of FIG. 1, along the cutting plane line 2-2′.

[0009] Referring to FIGS. 1 and 2, the conventional cantilever 12 formed on a substrate 10 includes a rectangular anchor 12 a fixed on the substrate 10, and a moving plate 12 b supported by the anchor 12 a. An air gap 14 is formed between the moving plate 12 b and the substrate 10. In this case, the moving plate 12 b is stepped up from the anchor 12 a. Accordingly, the moving plate 12 b and the anchor 12 a are formed with a step having a thickness of the air gap 14 therebetween.

[0010] Since the cantilever 12 is manufactured at a high temperature and under a high pressure, a remaining bending stress after the manufacturing process thereof acts on the support structure. According to a slope of the remaining bending stress, deformations of the cantilever appear, performances of the cantilever deteriorate, and the cantilever cannot be used for micro and high-precision products.

SUMMARY OF THE INVENTION

[0011] Accordingly, it is an object of the present invention to provide a micro electro mechanical system (MEMS) driving device having a step-up structure which minimizes deformations due to a manufacturing process thereof.

[0012] Another object of the present invention to provide a method of manufacturing a MEMS driving device.

[0013] Additional objects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.

[0014] To achieve the above and other objects of the present invention, there is provided a cantilever having a step-up structure, the cantilever comprising a substrate, an anchor formed on the substrate, and a moving plate connected to the anchor while maintaining a predetermined gap from the substrate, wherein the anchor includes a first anchor having a predetermined shape and a second anchor which is perpendicular to an edge of the first anchor while being formed along a longitudinal axis of the moving plate.

[0015] The anchor may further include a third anchor which is perpendicular to the edge of the first anchor and parallel with the second anchor. The first anchor may have a rectangular shape, and the second and third anchors may have predetermined lengths and widths, wherein a ratio of the respective widths to the respective lengths is larger than 0 and smaller than 1.

[0016] To achieve the above and/or other objects of the present invention, there is provided another cantilever having a step-up structure, the cantilever comprising a substrate, an anchor formed on the substrate, and a moving plate connected to the anchor while maintaining a predetermined gap from the substrate, wherein the anchor includes a first anchor of a predetermined shape and a second anchor formed near the first anchor. The first anchor may have a rectangular shape and the second anchor may have a slit shape perpendicular to a longitudinal axis of the moving plate.

[0017] To achieve the above and/or other objects of the present invention, there is also provided a manufacturing method for a cantilever of a step-up structure having a substrate on which a semiconductor device is formed, the method comprising forming a sacrificial layer on the substrate to cover the semiconductor device, forming an etch stop layer on the sacrificial layer, patterning the etch stop layer to expose the sacrificial layer in a predetermined shape, etching an exposed region of the sacrificial layer to expose a predetermined region which is connected to the semiconductor device, successively forming predetermined material layers on the etch stop layer to cover the exposed region so as to form the cantilever having the step-up structure, connecting a portion of the material layers on the exposed region with the substrate, and removing the sacrificial layer, wherein the patterning of the etch stop layer includes patterning first and second regions of the predetermined shape, the second region being formed along a longitudinal axis of the material layers and perpendicular to the first region.

[0018] The successively forming of the material layers may include forming a lower electrode layer on the sacrificial layer to cover the exposed region, forming a piezoelectric thin layer on the lower electrode layer, and forming an upper electrode layer on the piezoelectric thin layer. The patterning of the first and second regions may include patterning the second region having a length and a width with respect to the longitudinal axis and an axis perpendicular to the longitudinal axis of the material layers, respectively, and a ratio of the width to the length which is larger than 0 and smaller than 1.

[0019] The patterning of the etch stop layer may include patterning a third region of the predetermined shape along with the first and second regions, the third region being perpendicularly connected to the first region while being parallel with the second region along the longitudinal axis of the material layers. The third region may be patterned so as to have a predetermined length and width with respect to the longitudinal axis and an axis perpendicular to the longitudinal axis of the material layers, respectively, and a ratio of the width to the length which is larger than 0 and smaller than 1.

[0020] To achieve the above and/or other objects of the present invention, there is provided another manufacturing method for a cantilever of a step-up structure having a substrate on which a semiconductor device is formed, the method comprising forming a sacrificial layer on the substrate to cover the semiconductor device, forming an etch stop layer on the sacrificial layer, patterning the etch stop layer to expose the sacrificial layer in a predetermined shape, etching an exposed region of the sacrificial layer to expose a predetermined region which is connected to the semiconductor device, successively forming predetermined material layers on the etch stop layer to cover the exposed region so as to form the cantilever having the step-up structure, connecting a portion of the material layers on the exposed region with the substrate, and removing the sacrificial layer, wherein the patterning of the etch stop layer includes patterning first and second regions of the predetermined shape, the second region being parallel with and near the first region and perpendicular to a longitudinal axis of the material layers.

[0021] The first region may have a rectangular shape and the second region may have a slit shape.

[0022] According to the cantilever and manufacturing method for the same of the present invention, deformations of the cantilever due to the manufacturing process thereof are minimized. Consequently, the yield of the cantilever is improved, and the reliability of micro and high-precision products which use the cantilever is also improved.

BRIEF DESCRIPTION OF THE DRAWINGS

[0023] These and other objects and advantages of the present invention will become apparent and more readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:

[0024]FIG. 1 is a perspective view of a cantilever having a conventional step-up structure;

[0025]FIG. 2 is a sectional perspective view of the cantilever shown in FIG. 1 along the cutting plane line 2-2′;

[0026]FIG. 3A is a plane view of a conventional cantilever used as a first cantilever to model the cantilever having a step-up structure according to the present invention;

[0027]FIG. 3B is a sectional perspective view of the cantilever shown in FIG. 3A along the cutting plane line 3-3′;

[0028]FIG. 4A is a plane view of a second cantilever used to model the cantilever having a step-up structure according to an embodiment of the present invention;

[0029]FIG. 4B is a sectional perspective view of the cantilever shown in FIG. 4A along the cutting plane line 4-4′;

[0030]FIG. 5A is a plane view of a third cantilever used to model the cantilever having a step-up structure according to another embodiment of the present invention;

[0031]FIG. 5B is a sectional perspective view of the cantilever shown in FIG. 5A along the cutting plane line 5-5′;

[0032]FIG. 6A is a plane view of a fourth cantilever used to model the cantilever having a step-up structure according to yet another embodiment of the present invention;

[0033]FIG. 6B is a sectional perspective view of the cantilever shown in FIG. 6A along the cutting plane line 6-6′;

[0034]FIG. 7 is a bar graph illustrating a result of a finite element method (FEM) analysis of the cantilevers shown in FIGS. 3 through 6;

[0035] FIGS. 8-11, 12A-12B, 13A-13B, and 14-17 are perspective and sectional views illustrating a manufacturing process for the cantilever shown in FIG. 4 to measure a deformation amount of the cantilever having the step-up structure of the present invention;

[0036]FIGS. 18 through 20 are perspective views of masks used to manufacture the cantilevers of FIGS. 3A, 5A, and 6A, respectively;

[0037]FIG. 21 is a bar graph illustrating deformation amounts of the cantilevers of FIGS. 3A, 4A, 5A, and 6A, respectively, manufactured according to the present invention;

[0038]FIG. 22 is a bar graph illustrating the result of the comparison of FIG. 7 and FIG. 21; and

[0039]FIG. 23 is a graph illustrating a deformation amount of a cantilever according to the present invention while varying the ratio of width to length of a second anchor of the cantilever.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0040] Reference will now be made in detail to the embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the like elements throughout. The embodiments are described below in order to explain the present invention by referring to the figures.

[0041] A cantilever and a method of manufacturing the same according to the present invention will now be described in detail with reference to the accompanying drawings. In the drawings, the thickness of layers and regions of the cantilever are exaggerated for clarity.

[0042] To minimize a bending deformation of an anchor of a cantilever in a manufacturing process thereof, new shapes for the anchor are modeled, and a computer simulation of the new shapes is performed by using a finite element method (FEM). The cantilever anchors are then manufactured in the modeled shapes and are measured to determine optimal anchor shape(s) of minimum deformation. After establishing a controlled factor to minimize the anchor deformation, an optimal shape of the anchor having a minimum deformation is decided based on the controlled factor.

[0043] <Modeling>

[0044] To choose an anchor shape that minimizes a deformation in a step-up portion, which connects the anchor of a cantilever to a moving plate, the cantilevers having anchors of different shapes are designed as shown in FIGS. 3 through 6.

[0045] Referring to FIGS. 3 through 6, plane views of the corresponding cantilevers are shown in FIGS. 3A, 4A, 5A, and 6A. FIGS. 3B, 4B, 5B, and 6B show sectional perspective views illustrating sections of the corresponding cantilever anchors along the longitudinal axes of the cantilevers.

[0046]FIG. 3A illustrates a conventional cantilever which is used as a comparative sample and referred herein below as the first cantilever 12. FIGS. 4 through 6 illustrate second through fourth cantilevers 42, 54, and 64 according to the present invention.

[0047] Comparing FIGS. 3A and 3B with FIGS. 4 through 6, the shape of an anchor 12 a of the first cantilever 12 is different from the shapes of anchors 42 a, 54 a, and 64 a of the second through fourth cantilevers 42, 54, and 64. The differences are clearly shown in the plane views shown in FIGS. 3A, 4A, 5A and 6A.

[0048] The anchor 12 a of the first cantilever 12 has a rectangular shape. Referring to FIG. 4B, the anchor 42 a of the second cantilever 42 is formed by adding a first anchor 42 c to a rectangular anchor 42 b, perpendicular to one side of the rectangular anchor 42 b while having a predetermined length and width in a direction of a length of a moving plate 42 d. Referring to FIG. 5A, the anchor 54 a of the third cantilever 54 is formed by adding first and second anchors 54 c and 54 c′, with the same dimensions as the first anchor 42 c of the second cantilever 42, to a rectangular anchor 54 b. In this case, a reference numeral 54 d denotes a moving plate.

[0049] Referring to FIG. 6, the anchor 64 a of the fourth cantilever 64 includes a rectangular anchor 64 b and a first anchor 64 c near the rectangular anchor 64 b while being perpendicular to a longitudinal axis of a moving plate 64 d.

[0050] Structural analysis of the first through fourth cantilevers 12, 42, 54, and 64 shown in FIGS. 3 through 6 is performed using an FEM software. The results of the analysis are shown in Table 1 and FIG. 7. TABLE 1 Cantilever δ_(max)(μm) first cantilever 9.911 second cantilever 3.285 third cantilever 5.919 fourth cantilever 8.971

[0051] In FIGS. 7, (a), (b), (c), and (d) denote the types of the anchors of the first through fourth cantilevers 12, 42, 54, and 64. In Table 1, δ_(MAX)(μm) denotes the bending deformation at ends of the cantilevers.

[0052] Referring to Table 1 and FIG. 7, the bending deformation at the end of the first cantilever is 9.911 μm. However, the bending deformations of the second, third, and fourth cantilevers are smaller than that of the first cantilever. As shown in Table 1 and FIG. 7, the bending deformation of the second cantilever is the smallest.

[0053] The result of the modeling analysis shows that the bending deformations of the cantilevers having the anchors according to the present invention are reduced from the bending deformation of the first cantilever, and a reduction of, for example, 70% can be achieved.

EXPERIMENTAL EXAMPLE

[0054] To verify the results of the modeling analysis, the first through fourth cantilevers are manufactured, and the bending deformations at ends of the cantilevers are measured. A method of manufacturing the cantilevers will now be described with reference to FIGS. 8 through 17.

[0055] As shown in FIG. 8, to manufacture the second cantilever, a field oxide layer 72 is formed on a predetermined region of a substrate 70 to define an active region 74. After forming a gate electrode G on the active region, a source S and a drain D are formed at corresponding sides of the gate electrode G to form a transistor. A sacrificial layer 78 such as a phosphosilicate glass (PSG) layer is formed on the substrate 70 having the transistor. The sacrificial layer 78 will be removed to form an air gap between the substrate 70 and a MEMS driving device. An etch stop layer 80 and a photosensitive layer 82 are then successively formed on the sacrificial layer 78. The photosensitive layer 82 is patterned by using a mask having the same pattern as the anchor 42 a of the second cantilever 42 shown in FIG. 4A.

[0056]FIG. 9 shows a perspective view of the mask, and FIG. 10 is a perspective view of a photosensitive layer pattern 82 a formed by using the mask of FIG. 9. In FIG. 9, M1 denotes a first mask and E denotes an exposure window, having the same shape as the anchor 42 a of the second cantilever 42 shown in FIG. 4, to form the same pattern as the anchor 42 a on the photosensitive layer 82.

[0057] Referring to FIG. 10, an anchor pattern 82 b, having the same shape as the anchor 42 a of the second cantilever 42 shown in FIG. 4, is formed on the photosensitive layer pattern 82 a. In this case, the etch stop layer 80 is exposed through the anchor pattern 82 b. The anchor pattern 82 b is formed by a first pattern 82 c in a rectangular shape and a second pattern 82 d which protrudes perpendicularly to one side of the first pattern 82 c by a predetermined length L. The width W of the second pattern 82 d is narrower than the length L.

[0058] For convenience, the elements formed under the etch stop layer 80 are omitted in FIG. 10.

[0059]FIG. 11 illustrates the result of a patterning, and shows a sectional view of the anchor pattern 82 b of the photosensitive layer pattern 82 a along the cutting plane line 11-11′ shown in FIG. 10. A rectangular hatched section in FIG. 11 denotes the second pattern 82 d of the photosensitive layer pattern 82 a.

[0060] A region 80 a of the etch stop layer 80 exposed through the first and second patterns 82 c and 82 d is removed by using the photosensitive layer pattern 82 a as an etch mask. Successively, the photosensitive layer pattern 82 a is removed. FIGS. 12A and 12B illustrate sectional and perspective views of the second cantilever after removing the photosensitive layer pattern 82 a, respectively. In FIG. 12B, the elements formed under the sacrificial layer 78 are omitted for convenience. A reference numeral 78 a denotes a region of the sacrificial layer exposed through the removed region 80 a of the etch stop layer 80. For example, a wet etching is performed by using the etch stop layer 80 as an etch mask until a drain pad layer 76 is exposed. Hydrogen fluoride (HF) may be used as an etching solution for the wet etch.

[0061]FIGS. 13A and 13B illustrate sectional and perspective views of the second cantilever after the wet etching operation, respectively.

[0062] In FIG. 13A, a first via hole 78 a having the same shape as the anchor pattern 82 b (see FIGS. 10 and 11) is formed on the sacrificial layer 78 to expose a drain pad layer 76.

[0063] As shown in FIG. 14, after performing the wet etching operation, material layers to form the step-up driving device are successively formed on the etch stop layer 80 to connect to the drain pad layer 76. That is, a nitride layer (SiNx) 84, for example, as an anchor layer, is formed on the etch stop layer 80 to cover the drain pad layer 76, which is exposed through the first via hole 78 a. Then, a lower electrode 86, a dielectric layer 88, and an upper electrode 90 are successively formed on the nitride layer 84. The lower electrode 86 is formed of, for example, platinum (Pt). The dielectric layer 88 is formed of, for example, a PZT layer as a piezoelectric thin film, which is formed by, for example, a sol-gel method. The upper electrode 90 is formed of, for example, platinum and forms an electric field in the dielectric layer 88 with the lower electrode 86.

[0064] As shown in FIG. 15, after forming the above-described thin layers for the step-up driving device, the lower electrode 86 is exposed by removing portions of the upper electrode 90 and the dielectric layer 88.

[0065] Referring to FIG. 16, a second via hole 92 is formed on the exposed region of the lower electrode 86 by penetrating the nitride layer 84, thereby exposing the drain pad layer 76. The second via hole 92 is filled with a conductive plug 94 to connect the lower electrode 86 to the drain pad layer 76. The conductive plug 94 becomes a path to apply a signal voltage to the layers that form the driving device, which are formed on the etch stop layer 80, and support the MEMS driving device having the step-up structure after removing the sacrificial layer 78.

[0066] As shown in FIG. 17, the sacrificial layer 78 (see FIG. 16) formed between the substrate 70 and the etch stop layer 80 is removed by, for example, a wet etching method. Accordingly, an air gap 98 is formed between the substrate 70 and a cantilever 96. As a result, the MEMS driving device, i.e., the cantilever 42 having the anchor 42 a with the rectangular anchor 42 b and the first anchor 42 c (see FIG. 4B) in a step-up structure is formed.

[0067] The methods used to manufacture the first, third, and fourth cantilevers 12, 54 and 64 are the same as the method used to manufacture the second cantilever 42, except for the respective masks used to pattern the photosensitive layer 82.

[0068] In other words, a second mask M2 shown in FIG. 18 is used to manufacture the first cantilever 12, and a third and fourth masks M3 and M4 shown in FIGS. 19 and 20 are used to manufacture the third and fourth cantilevers 54 and 64, respectively.

[0069] Accordingly, deformations of the cantilevers having anchors of different shapes are measured at the ends of the moving plates of the cantilevers. In this case, the deformations are measured by using a micro focus measuring system. The result of the measurement is illustrated in Table 2 and FIG. 21. TABLE 2 Cantilever δ_(MAX)(μm) first cantilever 9.3 second cantilever 5.0 Third cantilever 6.4 fourth cantilever 8.5

[0070] In FIGS. 21, (a), (b), (c), and (d) denote the types of the anchors of the first through fourth cantilevers 12, 42, 54 and 64, respectively.

[0071] <Comparison Between the Results of Modeling and Experimental Example>

[0072] Table 3 illustrates deformations of the moving plates of the first through fourth cantilevers 12, 42, 54 and 64, which are obtained from the FEM analysis and experiment. FIG. 22 shows a graph illustrating the above deformation results. Reference numerals G1 and G2 in FIG. 22 denote the results of the FEM analysis and experiment, respectively. TABLE 3 δ_(MAX)(μm) cantilevers analysis results experimental result first cantilever 9.911 9.3 second cantilever 3.285 5.0 third cantilever 5.919 6.4 fourth cantilever 8.971 8.5

[0073] Referring to Table 3 and FIG. 22, the results of the FEM analysis and the examination are fairly the same, indicating that the results of the FEM analysis are reliable.

[0074] Where the shape of a cantilever anchor is one of the shapes of the second through fourth cantilever anchors, i.e., 42 a, 54 a and 64 a, the deformation against a moving plate of the cantilever is smaller than the deformation in the first cantilever 12.

[0075] To examine the change in bending deformations of a cantilever according to the sizes of a rectangular anchor and other portions, the second cantilever 42 having the minimum deformation is used as a basis for the analysis.

[0076] That is, to examine the change in a bending deformation of the moving plate 42 d of the second cantilever 42 shown in FIG. 4, according to the size of the first anchor 42 c perpendicular to one side of the rectangular anchor 42 b, a width of the first anchor 42 c is varied while the length of the first anchor 42 c is kept constant to a predetermined value of, for example, 10 μm. While varying the width of the first anchor 42 c, the change in the bending deformation at the ends of the moving plate 42 d of the second cantilever 42 is analyzed using an FEM software.

[0077] Table 4 and FIG. 23 illustrate the results of this analysis. TABLE 4 a (μm) b (μm) a/b deformation (μm) 2 10 0.2 3.285 3 10 0.3 3.792 5 10 0.5 4.649 6 10 0.6 5.028 8 10 0.8 5.756 10 10 1.0 6.510

[0078] Eelements a and b in Table 4 and FIG. 23 denote the width and length of the first anchor 42 c, respectively.

[0079] Referring to Table 4 and FIG. 23, as the width of the first anchor 42 c increases, the bending deformation of the moving plate 42 d increases. In a case where the width and length of the first anchor 42 c are the same, the bending deformation of the moving plate 42 d is 6.510 μm, much smaller than a bending deformation of 9.911 μm of the moving plate 12 b of the first cantilever 12. However, a driving characteristic of the moving plate 42 d may deteriorate where the width and length of the first anchor 42 c are the same. Consequently, the size of the first anchor 42 c is decided so as to minimize the bending deformation while adjusting the ratio of the width to the length (a/b) of the first anchor 42 c to be lower than 1. Where the length of the first anchor 42 c is excessively increased while keeping the width constant, the length of the moving plate 42 d for an actual drive is shortened, thereby deteriorating the driving characteristic of the moving plate 42 d.

[0080] While this invention has been particularly shown and described with reference to embodiments thereof, it is understood that they are merely illustrative and are not intended to limit the scope of the invention. For example, a rectangular portion of an anchor may be changed into a circular one, and a multiple-layer dielectric layer may be substituted for a dielectric layer. In addition, a cantilever having a combined shape of the second and fourth cantilevers 42 and 64 may be realized.

[0081] As described above, the present invention discloses a MEMS driving device having a step-up structure, and more particularly, a multiple-layer cantilever having a first anchor of a rectangular shape, and a second anchor which is perpendicular to one side of the first anchor and parallel with a longitudinal axis of a moving plate of the multiple-layer cantilever. By arranging the second anchor as mentioned above, deformation of the cantilever, namely, deformation of the moving plate of the cantilever caused by the high temperature and pressure in a manufacturing process thereof, is considerably reduced. As a result, the yield rate of the cantilever is improved, and the reliability of a product using the cantilever is also improved.

[0082] Although a few embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes may be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents. 

What is claimed is:
 1. A cantilever having a step-up structure, comprising: a substrate; an anchor formed on the substrate; and a moving plate connected to the anchor while maintaining a predetermined gap from the substrate, wherein the anchor includes: a first anchor having a predetermined shape, and a second anchor which is perpendicular to an edge of the first anchor while being formed along a longitudinal axis of the moving plate.
 2. The cantilever having a step-up structure of claim 1, wherein the anchor further includes a third anchor which is perpendicular to the edge of the first anchor and parallel with the second anchor.
 3. The cantilever having a step-up structure of claim 2, wherein: the first anchor has a rectangular shape, and the second and third anchors have corresponding lengths and widths, where a ratio of the respective widths to the respective lengths is larger than 0 and smaller than
 1. 4. A cantilever having a step-up structure, comprising: a substrate; an anchor formed on the substrate; and a moving plate connected to the anchor while maintaining a predetermined gap from the substrate, wherein the anchor includes a first anchor of a predetermined shape and a second anchor formed near the first anchor.
 5. The cantilever having a step-up structure of claim 4, wherein: the first anchor has a rectangular shape, and the second anchor has a slit shape perpendicular to a longitudinal axis of the moving plate.
 6. A manufacturing method for a cantilever of a step-up structure having a substrate on which a semiconductor device is formed, the method comprising: forming a sacrificial layer on the substrate to cover the semiconductor device; forming an etch stop layer on the sacrificial layer; patterning the etch stop layer to expose the sacrificial layer in a predetermined shape; etching an exposed region of the sacrificial layer to expose a predetermined region which is connected to the semiconductor device; successively forming predetermined material layers on the etch stop layer to cover the exposed region so as to form the cantilever having the step-up structure; connecting a portion of the material layers on the exposed region with the substrate; and removing the sacrificial layer, wherein the patterning of the etch stop layer includes patterning first and second regions of the predetermined shape, the second region being formed along a longitudinal axis of the material layers and perpendicular to the first region.
 7. The manufacturing method of claim 6, wherein the successively forming of the material layers includes: forming a lower electrode layer on the sacrificial layer to cover the exposed region; forming a piezoelectric thin layer on the lower electrode layer; and forming an upper electrode layer on the piezoelectric thin layer.
 8. The manufacturing method of claim 6, wherein the patterning of the first and second regions includes patterning the second region having a length and a width with respect to the longitudinal axis and an axis perpendicular to the longitudinal axis of the material layers, respectively, and a ratio of the width to the length larger than 0 and smaller than
 1. 9. The manufacturing method of claim 6, wherein the patterning of the etch stop layer includes pattering a third region of the predetermined shape along with the first and second regions, the third region being perpendicularly connected to the first region while being parallel with the second region along the longitudinal axis of the material layers.
 10. The manufacturing method of claim 9, wherein the patterning of the first through third regions includes patterning the third region having a length and a width with respect to the longitudinal axis and an axis perpendicular to the longitudinal axis of the material layers, respectively, and a ratio of the width to the length larger than 0 and smaller than
 1. 11. The manufacturing method of claim 6, wherein the etching of the exposed region includes wet etching the exposed region of the sacrificial layer using hydrogen fluoride (HF).
 12. A manufacturing method for a cantilever of a step-up structure having a substrate on which a semiconductor device is formed, the method comprising: forming a sacrificial layer on the substrate to cover the semiconductor device; forming an etch stop layer on the sacrificial layer; patterning the etch stop layer to expose the sacrificial layer in a predetermined shape; etching an exposed region of the sacrificial layer to expose a predetermined region which is connected to the semiconductor device; successively forming predetermined material layers on the etch stop layer to cover the exposed region so as to form the cantilever having the step-up structure; connecting a portion of the material layers on the exposed region with the substrate; and removing the sacrificial layer, wherein the patterning of the etch stop layer includes patterning first and second regions of the predetermined shape, the second region being parallel with and near the first region and perpendicular to a longitudinal axis of the material layers.
 13. The manufacturing method of claim 12, wherein the patterning of the first and second regions includes patterning the first region having a rectangular shape and the second region having a slit shape.
 14. The manufacturing method of claim 12, wherein the successively forming of the material layers includes: forming a lower electrode layer on the sacrificial layer to cover the exposed region; forming a piezoelectric thin layer on the lower electrode layer; and forming an upper electrode layer on the piezoelectric thin layer.
 15. The manufacturing method of claim 12, wherein the etching of the exposed region includes wet etching the exposed region of the sacrificial layer using hydrogen fluoride (HF).
 16. The manufacturing method of claim 6, wherein the successively forming of the material layers includes: forming an anchor layer to cover the exposed region; forming a lower electrode layer on the anchor layer; forming a dielectric layer on the lower electrode layer; and forming an upper electrode layer on the dielectric layer.
 17. The manufacturing method of claim 16, wherein: the anchor layer is a nitride layer, the dielectric layer is a piezoelectric thin layer, and the sacrificial layer is a phosphosilicate glass.
 18. The manufacturing method of claim 7, wherein the connecting the portion of the materials layer on the exposed region with the substrate includes: exposing a section of the lower electrode layer covering the exposed region by removing a corresponding section of the upper electrode and piezoelectric thin layers; and forming an interconnect between the lower electrode layer and the predetermined region connected to the semiconductor device. 